Manufacturing Description Module Manufacturer: G.Skill
Module Part Number: F4-3600C16-8GTZNC
Module Series: Trident Z Neo
DRAM Manufacturer: Hynix
DRAM Components: H5AN8G8NCJR-TFC
DRAM Die Revision / Process Node: C / 18 nm
Module Manufacturing Date: Undefined
Module Manufacturing Location: Taipei, Taiwan
Module Serial Number: 00000000h
Module PCB Revision: 00h
Physical & Logical Attributes Fundamental Memory Class: DDR4 SDRAM
Module Speed Grade: DDR4-2133
Base Module Type: UDIMM (133,35 mm)
Module Capacity: 8 GB
Reference Raw Card: A1 (10 layers)
JEDEC Raw Card Designer: SK hynix
Module Nominal Height: 31 < H <= 32 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: 1 < T <= 2 mm
Number of DIMM Ranks: 1
Address Mapping from Edge Connector to DRAM: Standard
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Single die
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 16 bits
Number of Bank Addresses: 2 bits (4 banks)
Bank Group Addressing: 2 bits (4 groups)
DRAM Device Width: 8 bits
Programmed DRAM Density: 8 Gb
Calculated DRAM Density: 8 Gb
Number of DRAM components: 8
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
DRAM Post Package Repair: Supported
Soft Post Package Repair: Supported
DRAM Timing Parameters Fine Timebase: 0,001 ns
Medium Timebase: 0,125 ns
CAS Latencies Supported: 10T, 11T, 12T, 13T,
14T, 15T, 16T
Minimum Clock Cycle Time (tCK min): 0,938 ns (1066,10 MHz)
Maximum Clock Cycle Time (tCK max): 1,600 ns (625,00 MHz)
CAS# Latency Time (tAA min): 13,750 ns
RAS# to CAS# Delay Time (tRCD min): 13,750 ns
Row Precharge Delay Time (tRP min): 13,750 ns
Active to Precharge Delay Time (tRAS min): 33,000 ns
Act to Act/Refresh Delay Time (tRC min): 46,750 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 350,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 260,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 160,000 ns
Short Row Active to Row Active Delay (tRRD_S min): 3,700 ns
Long Row Active to Row Active Delay (tRRD_L min): 5,300 ns
Write Recovery Time (tWR min): 15,000 ns
Short Write to Read Command Delay (tWTR_S min): 2,500 ns
Long Write to Read Command Delay (tWTR_L min): 7,500 ns
Long CAS to CAS Delay Time (tCCD_L min): 5,625 ns
Four Active Windows Delay (tFAW min): 21,000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1,20 V operable/endurant: Yes/Yes
Thermal Parameters Module Thermal Sensor: Not Incorporated
Integrated Temperature Sensor Manufacturer: ABLIC Inc.
Model: S-34TS04A
Revision: 21h
Temperature Monitor Status: Active
Current Ambient Temperature: 39,750 °C
Sensor Resolution: 0,2500 °C (10-bit ADC)
Accuracy over the active range (75 °C to 95 °C): ±1 °C
Accuracy over the monitoring range (40 °C to 125 °C): ±2 °C
Open-drain Event Output: Disabled
10V of VHV on A0 pin: Supported
Negative Temperature Measurements: Supported
Interrupt capabilities: Supported
SPD Protocol SPD Revision: 1.1
SPD Bytes Total: 512
SPD Bytes Used: 384
SPD Checksum (Bytes 00h-7Dh): 242Dh (OK)
SPD Checksum (Bytes 80h-FDh): A01Ch (OK)
Part number details JEDEC DIMM Label: 8GB 1Rx8 PC4-2133-UA1-11
Frequency CAS RCD RP RAS RC RRDS RRDL WR WTRS WTRL FAW
1067 MHz 16 15 15 36 50 4 6 16 3 8 23
1067 MHz 15 15 15 36 50 4 6 16 3 8 23
933 MHz 14 13 13 31 44 4 5 14 3 7 20
933 MHz 13 13 13 31 44 4 5 14 3 7 20
800 MHz 12 11 11 27 38 3 5 12 2 6 17
800 MHz 11 11 11 27 38 3 5 12 2 6 17
667 MHz 10 10 10 22 32 3 4 10 2 5 14
Intel Extreme Memory Profiles Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 2 DIMM/channel
XMP Parameter Profile 1 Profile 2
Speed Grade: DDR4-3604 N/A
DRAM Clock Frequency: 1802 MHz N/A
Module VDD Voltage Level: 1,35 V N/A
Minimum DRAM Cycle Time (tCK): 0,555 ns N/A
CAS Latencies Supported: 16T N/A
CAS Latency Time (tAA): 8,869 ns N/A
RAS# to CAS# Delay Time (tRCD): 10,454 ns N/A
Row Precharge Delay Time (tRP): 10,454 ns N/A
Active to Precharge Delay Time (tRAS): 21,625 ns N/A
Active to Active/Refresh Delay Time (tRC): 32,059 ns N/A
Four Activate Window Delay Time (tFAW): 24,000 ns N/A
Short Activate to Activate Delay Time (tRRD_S): 2,029 ns N/A
Long Activate to Activate Delay Time (tRRD_L): 4,849 ns N/A
Normal Refresh Recovery Delay Time (tRFC1): 350,000 ns N/A
2x mode Refresh Recovery Delay Time (tRFC2): 260,000 ns N/A
4x mode Refresh Recovery Delay Time (tRFC4): 160,000 ns N/A
Show delays in clock cycles
